150V N-Channel QFETThese N-Channel enhancement mode power field effect
Transistors FQA90N15-F109 are produced using Fairchilds proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. By Fairchild Semiconductor |
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| Part | Manufacturer | Description | Datasheet | Samples | |
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| R5F10968KSP#X0G | Renesas Electronics Corporation |
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| R5F1096BJSP#H0G | Renesas Electronics Corporation |
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| R5F1096CKSP#H0 | Renesas Electronics Corporation |
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| R5F1096DKSP#X0 | Renesas Electronics Corporation |
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| R5F109AAJSP#H0 | Renesas Electronics Corporation |
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| R5F109ABJSP#X0G | Renesas Electronics Corporation |
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| R5F109ACKSP#H0G | Renesas Electronics Corporation |
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| R5F109ADKSP#X0G | Renesas Electronics Corporation |
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| R5F109BAJNA#G0G | Renesas Electronics Corporation |
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| R5F109BBJNA#W0G | Renesas Electronics Corporation |
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| FQA90N15-F109 Pb-Free | FQA90N15-F109 Cross Reference | FQA90N15-F109 Schematic | FQA90N15-F109 Distributor |
| FQA90N15-F109 Application Notes | FQA90N15-F109 RoHS | FQA90N15-F109 Circuits | FQA90N15-F109 footprint |
