30a, -100v, 0.095 Ohm, Rad Hard, P-channel Power Mosfets Corporation

The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened Power MOSFETs FRE9160D FRE9160R FRE9160H of both N and P channel enhancement types with rat- ings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur- rent limiting. This MOSFET is an enhancement-mode silicon-gate power eld effect Transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet. By Intersil Corporation
FRE9160H 's PackagesFRE9160H 's pdf datasheet
FRE9160D
FRE9160R

FRE9160H pdf datasheet download


FRE9160H Pinout, Pinouts
FRE9160H pinout,Pin out
This is one package pinout of FRE9160H,If you need more pinouts please download FRE9160H's pdf datasheet.

FRE9160H Application circuits
FRE9160H circuits
This is one application circuit of FRE9160H,If you need more circuits,please download FRE9160H's pdf datasheet.


Related Electronics Part Number

Related Keywords:

FRE9160H Pb-Free FRE9160H Cross Reference FRE9160H Schematic FRE9160H Distributor
FRE9160H Application Notes FRE9160H RoHS FRE9160H Circuits FRE9160H footprint