19a, -200v, 0.210 Ohm, Rad Hard, P-channel Power Mosfets

The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened Power MOSFETs FRE9260D FRE9260R FRE9260H of both N and P channel enhancement types with rat- ings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power eld effect Transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equiv- alent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet. By Intersil Corporation
FRE9260H 's PackagesFRE9260H 's pdf datasheet

FRE9260H Pinout, Pinouts
FRE9260H pinout,Pin out
This is one package pinout of FRE9260H,If you need more pinouts please download FRE9260H's pdf datasheet.

FRE9260H Application circuits
FRE9260H circuits
This is one application circuit of FRE9260H,If you need more circuits,please download FRE9260H's pdf datasheet.

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