20a, 250v, 0.170 Ohm, Rad Hard, N-channel Power Mosfets Corporation

The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs FRK254D FRK254R FRK254H of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur- rent limiting. This MOSFET is an enhancement-mode silicon-gate power eld effect Transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet By Intersil Corporation
FRK254H 's PackagesFRK254H 's pdf datasheet
FRK254D
FRK254R

FRK254H pdf datasheet download


FRK254H Pinout, Pinouts
FRK254H pinout,Pin out
This is one package pinout of FRK254H,If you need more pinouts please download FRK254H's pdf datasheet.

FRK254H Application circuits
FRK254H circuits
This is one application circuit of FRK254H,If you need more circuits,please download FRK254H's pdf datasheet.


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