3a, 500v, 2.50 Ohm, Rad Hard, N-channel Power Mosfets Corporation

The Intersil Corporation has designed a series of SECOND GENERATION hard- ened Power MOSFETs FRM430D FRM430R FRM430H of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25M. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power eld effect Transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet. By Intersil Corporation
FRM430H 's PackagesFRM430H 's pdf datasheet

FRM430H Pinout, Pinouts
FRM430H pinout,Pin out
This is one package pinout of FRM430H,If you need more pinouts please download FRM430H's pdf datasheet.

FRM430H Application circuits
FRM430H circuits
This is one application circuit of FRM430H,If you need more circuits,please download FRM430H's pdf datasheet.

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