11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs

Intersil has designed a series of SECOND GENERATION hardened power MOS- FETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power eld effect Transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. By Intersil Corporation
FRS9140H 's PackagesFRS9140H 's pdf datasheet

FRS9140H Pinout, Pinouts
FRS9140H pinout,Pin out
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