24a, 200v, 0.110 Ohm, Rad Hard, Segr Resistant, N-channel Power Mosfets Corporation

The Discrete FSF250D FSF250R Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particu- lar, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space envi- ronments. The dose rate and neutron tolerance necessary for military applications have not been sacriced. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. By Intersil Corporation
FSF250D 's PackagesFSF250D 's pdf datasheet
FSF250D1
FSF250D3
FSF250R1
FSF250R3
FSF250R4
FSF250R




FSF250D Pinout, Pinouts
FSF250D pinout,Pin out
This is one package pinout of FSF250D,If you need more pinouts please download FSF250D's pdf datasheet.

FSF250D Application circuits
FSF250D circuits
This is one application circuit of FSF250D,If you need more circuits,please download FSF250D's pdf datasheet.


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FSF250D Application Notes FSF250D RoHS FSF250D Circuits FSF250D footprint