Radiation Hardened, Segr Resistant N-channel Power Mosfet Corporation

Intersil Star*Power Rad Hard MOSFETs FSGYC260R have been specically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) AND Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured. By Intersil Corporation
FSGYC260R 's PackagesFSGYC260R 's pdf datasheet

FSGYC260R Pinout, Pinouts
FSGYC260R pinout,Pin out
This is one package pinout of FSGYC260R,If you need more pinouts please download FSGYC260R's pdf datasheet.

FSGYC260R Application circuits
FSGYC260R circuits
This is one application circuit of FSGYC260R,If you need more circuits,please download FSGYC260R's pdf datasheet.

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