Radiation Hardened, Segr Resistant N-channel Power Mosfet CorporationIntersil Star*Power Rad Hard
MOSFETs FSGYC260R have been specically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) AND Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for SEE (Single Event Effects)
which the Intersil FS families have always featured. By Intersil Corporation
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| FSGYC260R Pb-Free | FSGYC260R Cross Reference | FSGYC260R Schematic | FSGYC260R Distributor |
| FSGYC260R Application Notes | FSGYC260R RoHS | FSGYC260R Circuits | FSGYC260R footprint |
