44a, -100v, 0.055 Ohm, Rad Hard, Segr Resistant, P-channel Power Mosfets Corporation

The Discrete Products FSJ9160D FSJ9160R Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particu- lar, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space envi- ronments. The dose rate and neutron tolerance necessary for military applications have not been sacriced. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. By Intersil Corporation
FSJ9160R 's PackagesFSJ9160R 's pdf datasheet
FSJ9160D1
FSJ9160D3
FSJ9160R1
FSJ9160R3
FSJ9160R4
FSJ9160D

FSJ9160R pdf datasheet download


FSJ9160R Pinout, Pinouts
FSJ9160R pinout,Pin out
This is one package pinout of FSJ9160R,If you need more pinouts please download FSJ9160R's pdf datasheet.

FSJ9160R Application circuits
FSJ9160R circuits
This is one application circuit of FSJ9160R,If you need more circuits,please download FSJ9160R's pdf datasheet.


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