3a, 500v, 2.70 Ohm, Rad Hard, Segr Resistant, N-channel Power Mosfets Corporation

The Discrete Products Operation of Intersil Corporation has developed FSS430D FSS430R a series of Radiation Hardened MOSFETs specif- ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particu- lar, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space envi- ronments. The dose rate and neutron tolerance necessary for military applications have not been sacriced. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. By Intersil Corporation
FSS430D 's PackagesFSS430D 's pdf datasheet

FSS430D Pinout, Pinouts
FSS430D pinout,Pin out
This is one package pinout of FSS430D,If you need more pinouts please download FSS430D's pdf datasheet.

FSS430D Application circuits
FSS430D circuits
This is one application circuit of FSS430D,If you need more circuits,please download FSS430D's pdf datasheet.

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