Radiation Hardened, Segr Resistant N-channel Power Mosfets CorporationThe Discrete Products FSYC163D FSYC163R Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacriced. By Intersil Corporation
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| FSYC163R Pb-Free | FSYC163R Cross Reference | FSYC163R Schematic | FSYC163R Distributor |
| FSYC163R Application Notes | FSYC163R RoHS | FSYC163R Circuits | FSYC163R footprint |
