Radiation Hardened, Segr Resistant N-channel Power Mosfets CorporationThe Discrete Products FSYE13A0D FSYE13A0R Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacriced. By Intersil Corporation
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| FSYE13A0R Application Notes | FSYE13A0R RoHS | FSYE13A0R Circuits | FSYE13A0R footprint |
