TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TOSHIBA Insulated Gate Bipolar Transistor SILICON N CHANNEL IGBT , GT10J303 HIGH POWER SWITCHING APPLICATIONS Motor Control APPLICATIONS Third-generation IGBT By Toshiba Semiconductor

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• GT10J312, TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
• GT20J301, TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
• GT60J323, TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• GT50J301, TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
• GT60M303, TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
• IXGK120N60C2, High Frequency Range (> 40 KHz), Single IGBT
• STGD3NB60K, N-channel 3a - 600v - To-220/dpak/d2pak Powermes Tm Igbt
• IXGH50N90B2, Mid-Frequency Range (15 KHz - 40 KHz) Single IGBT
• IXER20N120, 3rd Generation NPT Discrete IGBTs
• SG15N12DP, DISCRETE IGBTS
• STGW20NB60H, N-channel 20a - 600v To-247 Powermesh Igbt
• IXGH32N90B2D1, Mid-Frequency Range (15 KHz - 40 KHz) , IGBT With Freewheeling Diode
• IXDR35N60BD1, NPT Discrete IGBTs

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