TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

TOSHIBA Insulated Gate Bipolar Transistor SILICON N CHANNEL IGBT , GT15M321 HIGH POWER SWITCHING APPLICATIONS Fourth-generation IGBT FRD included between emitter and collector By Toshiba Semiconductor
GT15M321 's PackagesGT15M321 's pdf datasheet



GT15M321 Pinout, Pinouts
GT15M321 pinout,Pin out
This is one package pinout of GT15M321,If you need more pinouts please download GT15M321's pdf datasheet.

GT15M321 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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