TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT , GT60J323 Current Resonance Inverter Switching Application By Toshiba Semiconductor

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• GT60J323H, TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• GT60M323, TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• GT50J322, TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
• GT50J325, TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• GT30J322, TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
• SGU2N60UF, Ultra-Fast IGBT
• 2PG304, Insulated Gate Bipolar Transistor
• 2PG003, IGBT Discrete N-channel Enhancement Mode IGBT
• GT60M322, TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• IXGT16N170A, High Voltage NPT IGBTs (1600V -1700V)
• HGTG7N60A4, 600V, SMPS Series N-Channel IGBT
• HGTG34N100E2, 34a, 1000v N-channel Igbt Corporation
• TK40A10J1, TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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