The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used
for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility
with thermocompression and thermosonic compatibility wire-bonding processes.
The ...
Avagos ATF-33143 is a high dynamic range, low noise
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount
plastic package.
Based on its featured performance, ATF-33143 is ideal for
the frst or second stage of base station LNA due ...
Avago Technologiess ATF-331M4 is a high linearity, low
noise pHEMT housed in a miniature leadless package.
The ATF-331M4s small size and low profile makes it
ideal for the design of hybrid modules and other
space-constraint devices.
Based on its featured ...
ATF-34143 GaAs Field Effect Avagos ATF-34143 is a high dynamic range, low noise
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount
plastic package.
Based on its featured performance, ATF-34143 is ideal for
the frst stage of base ...
Avagos ATF-35143 is a high dynamic range, low noise,
PHEMT housed in a 4-lead SC-70 (SOT-343) surface
mount plastic package.
Based on its featured performance, ATF-35143 is suitable
for applications in cellular and PCS base stations, ...
Avago Technologies\' ATF-36077 is an ultra-low-noise Pseudo-
morphic High Electron Mobility Transistor (PHEMT), pack-
aged in a low parasitic, surface-mountable ceramic package.
Properly matched, this transistor will provide typical 12
GHz noise ...
ATF-36163 GaAs Field Effect The Avago ATF-36163 is a low-noise Pseudomorphic
High Electron Mobility Transistor (PHEMT), in the
SOT-363 (SC-70) package. When optimally matched for
minimum noise figure, it will provide a noise figure of
1 dB at 12 GHz and ...
ATF-38143 GaAs Field Effect Avago Technologiess ATF-38143 is a high dynamic
range, low noise, PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic package.
Based on its featured performance, ATF-38143 is suitable
for applications in cellular ...
ATF-50189 GaAs Field Effect Avago Technologiess ATF-50189 is a high linearity,
medium power, low noise E-pHEMT FET packaged in
a low cost surface mount SOT89[3] package. The com-
bination of low noise figure and high output IP3 at
the same bias point ...
ATF-501P8 GaAs Field Effect Avago Technologiess ATF-501P8 is a single-voltage
high linearity, low noise E-pHEMT housed in an 8-
lead JEDEC-standard leadless plastic chip carrier
(LPCC[3]
) package. The device is ideal as a medium-
power amplifier. Its ...
ATF-511P8 GaAs Field Effect Avago Technologiess ATF-511P8 is a single-voltage
high linearity, low noise E-pHEMT housed in an 8-lead
JEDEC-standard leadless plastic chip carrier
(LPCC[3]
) package. The device is ideal as a high
linearity, low-noise, ...
ATF-52189 GaAs Field Effect Avago Technologiess ATF-52189 is a single-voltage
high linearity, low noise E-pHEMT FET packaged in a
low cost surface mount SOT89 package. The device is
ideal as a medium-power, high-linearity amplifier. Its
operating frequency ...
ATF-521P8 GaAs Field Effect Avago Technologies ATF521P8 is a singlevoltage high
linearity, low noise EpHEMT housed in an 8lead JEDEC
standard leadless plastic chip carrier (LPCC[3]
) package.
The device is ideal as a mediumpower, ...
Avago Technologiess ATF-53189 is a single-voltage
high linearity, low noise E-pHEMT FET packaged in
a low cost surface mount SOT89 package. The device
is ideal as a high-linearity, low noise, medium-power
amplifier. Its operating frequency range is ...
Avago Technologies ATF54143 is a high dynamic range,
low noise, EPHEMT housed in a 4lead SC70 (SOT343)
surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF54143 ideal for cellular/PCS base ...
ATF-55143 GaAs Field Effect Avago Technologies ATF55143 is a high dynamic range,
very low noise, single supply EPHEMT housed in a
4lead SC70 (SOT343) surface mount plastic package. ...
Avago Technologies ATF58143 is a high dynamic range,
low noise EPHEMT housed in a 4lead SC70 (SOT343)
surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF58143 ideal as low noise ampli
fer ...
Avago Technologies has combined its industry leading
E-pHEMT technology with a revolutionary chip scale
package. The VMMK-1218 can produce an LNA with
high dynamic range, high gain and low noise fgure that
generates of of a single ...
Avago Technologies has combined its industry leading E-
pHEMT technology with a revolutionary chip scale package.
The VMMK-1225 can produce an LNA with high dynamic
range, high gain and low noise i gure that operates of of a
single position DC power ...
Avago Technologies has combined its industry lead-
ing E-pHEMT technology with a revolutionary chip scale
package. The GaAsCap wafer scale sub-miniature lead-
less package is small and ultra thin, yet can be handled
and placed with ...
VMMK-2503 GaAs Field Effect Avago Technologies has combined its industry leading E-
pHEMT technology with a revolutionary chip scale pack-
age. The GaAsCap wafer scale sub-miniature leadless pack-
age is small and ultra thin yet can be handled and placed ...
The FLL120MK is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ...
The MwT-22 is GaAs MESFET device device whose nominal 0.5 micron gate length and 4800 micron gate width make it ideally
suited for applications requiring high power up to 1.5-2watts. The chip is produced using MwT\'s reliable metal systems and all
devices ...
The MwT-24 is GaAs MESFET device device whose nominal 0.5 micron gate length and 12000 microns gate width make it ideally
suited for applications requiring high power up to 4watts. The chip is produced using MwT\'s reliable metal systems and all
devices ...
The MwT-25 is GaAs MESFET device device whose nominal 0.5 micron gate length and 14000 micron gate width make it ideally
suited for applications requiring high power up to 5-6 watts. The chip is produced using MwT\'s reliable metal systems and all
devices ...
The MwT-1789HL is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high linearity driver
and Power Amplifier applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, ...
The MwT-1789LN is a low noise GaAs MESFET device in low cost SOT89 package that is ideally suited for low noise/high dynamic
range applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, CDMA, Edge, ...
the MwT-1789SB is a high linearity GaAs
MESFET device in low cost SOT89 package that is ideally suited for high linearity driver or high dynamic range LNA applications. The
applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as ...
The MwT-A989 is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high dynamic range LNA
applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, ...
the MwT-A989SB is a high linearity GaAs
MESFET device in low cost SOT89 package that is ideally suited for high dynamic range LNA applications. The applications include
2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, ...
The MwT-17Q3 is a high linearity GaAs MESFET device in low cost QFN3X3 package that is ideally suited for high linearity
driver, PA (Power Amplifier), and high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G wireless ...
The MwT-22Q4 is a high linearity GaAs MESFET device in low cost QFN package that is ideally suited for high power / high linearity
applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, ...
Designed specifically for single voltage operations (i.e. no negative voltage is required), the MwT-PH15QACSB is a medium power
AlGaAs/InGaAs PHEMT device in a low cost 3mm X 3mm QFN package with excellent RF performance up to 12 GHz. The chip is
produced ...
he MwT-PH5 is a dual gate AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal
0.3 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and power up to 30
GHz ...
The MwT-PH8 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron
gate length and 1200 micron gate width make it ideally suited for applications requiring high-gain and power up to 20 GHz
frequency ...
The MwT-PH9 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron
gate length and 750 micron gate width make it ideally suited for applications requiring high-gain and power up to 26 GHz
frequency range ...
The MwT-PH11 is GaAs PHEMT device device whose nominal 0.3 micron gate length and 2400 microns gate width make it
ideally suited for applications requiring high power up to 1.5watt. The chip is produced using MwT\'s reliable metal systems and
all devices ...
The MwT-PH16A is a AlGaAs/InGaAs pHEMT device whose nominal 0.25 micron gate length and 1600 micron gate width make it
ideally suited for applications requiring high-gain and high power up to 20 GHz . The device is equally effective for either wideband ...
The MwT-11 is GaAs MESFET device device whose nominal 0.3 micron gate length and 2400 microns
gate width make it ideally suited for applications requiring high power up to 1watt. The chip is
produced using MwT\'s reliable metal systems and all devices ...
The MwT-4 is a GaAs MESFET device whose nominal quarter-micron gate length and 180 micron gate width make it ideally suited to
applications requiring high-gain in the 500 MHz to 26 GHz frequency range. The straight geometry of the MwT-4 makes it ...
The MwT-7 is a GaAs MESFET device whose nominal quarter-micron gate length and 250 micron gate width make it ideally suited to
applications requiring high-gain and medium power in the 500 MHz to 26 GHz frequency range. The straight geometry of the ...
The MwT-LP7 is a low phase noise GaAs MESFET device with nominal quarter-micron gate length and 250-micron gate width. With deep under-
standing on the physical origins of phase noise, the device is built by using a unique proprietary technology to minimize ...
The MwT-A9 is a GaAs MESFET device whose nominal quarter-micron gate length and 750 micron gate width make it ideally suited to
applications requiring high-gain in the 500 MHz to 18 GHz frequency range with moderate power output while exhibiting low noise ...
The MwT-1 is a GaAs MESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally suited to
applications requiring high-gain in the 100 MHz to 12 GHz frequency range. The straight geometry of the MwT-1 makes it ...
The MwT-3 is a GaAs MESFET device whose nominal quarter-micron gate length and 300 micron gate width make it ideally suited to
applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from +18 to +21 dBm. ...
The MwT-5 is a dual gate GaAs MESFET device whose nominal quarter-micron gate length and 300 micron gate width make it ideally
suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range. The straigth gate geometry of the MwT-5 makes ...
The MwT-2 is a GaAs MESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally suited to
applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from 100 to 200 milli-watts. ...
The MwT-6 is a GaAs MESFET is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point communica-
tions links, and other wireless applications as the driver transistor for the output power amplifier. The third-order intercept ...
The MwT-8 is a GaAs MESFET device which is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point
communications links, and other wireless applications as the driver transistor for the output power amplifier. The ...
The MwT-9 is a GaAs MESFET device whose nominal quarter-micron gate length and 750 micron gate width make it ideally suited to
applications requiring high-gain in the 500 MHz to 18 GHz frequency range with power output ranging from +24 to +26 dBm. It can ...
The MwT-15 is a GaAs MESFET device whose nominal quarter micron gate length and 630 micron gate width make it ideally suited to
applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from 100-200 milli-watts. ...
The MwT-16 is a GaAs MESFET device whose nominal quarter micron gate length and 900 micron gate width make it ideally suited to
applications requiring high-power output in the 2 GHz to 18 GHz frequency range. The straight gate geometry of the MwT-16 makes ...
The MwT-17 is a GaAs MESFET device which is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-
point communications links, and other wireless applications as the driver transistor for the output power amplifier. The ...
The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are
specifically designed to provide high power at L-Band frequencies with
gain, linearity and efficiency superior to that of silicon devices. The
performance in multitone environments for ...
LOW NOISE L TO Ku-BAND GaAs MESFET,NE76038 is a high performance gallium arsenide metal
semiconductor field effect transistor housed in a plastic
package. Its low noise figure makes this device appropriate
for use in the second or third stages of low noise ...
