• Product pinout
  • Description
  • TGF1350-SCC,0.3 Mm, MESFET
  • The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility with thermocompression and thermosonic compatibility wire-bonding processes. The ...
  • ATF-331M4,GaAs Field Effect
  • Avago Technologiess ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. The ATF-331M4s small size and low profile makes it ideal for the design of hybrid modules and other space-constraint devices. Based on its featured ...
  • ATF-36077,2–18 GHz Ultra Low Noise Pseudomorphic HEMT
  • Avago Technologies\' ATF-36077 is an ultra-low-noise Pseudo- morphic High Electron Mobility Transistor (PHEMT), pack- aged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise ...
  • ATF-36163,1.5 –18 GHz Surface Mount Pseudomorphic HEMT
  • ATF-36163 GaAs Field Effect The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched for minimum noise figure, it will provide a noise figure of 1 dB at 12 GHz and ...
  • ATF-38143,ATF-38143 GaAs Field Effect
  • ATF-38143 GaAs Field Effect Avago Technologiess ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured performance, ATF-38143 is suitable for applications in cellular ...
  • ATF-50189,ATF-50189 GaAs Field Effect
  • ATF-50189 GaAs Field Effect Avago Technologiess ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The com- bination of low noise figure and high output IP3 at the same bias point ...
  • ATF-501P8,ATF-501P8 GaAs Field Effect
  • ATF-501P8 GaAs Field Effect Avago Technologiess ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8- lead JEDEC-standard leadless plastic chip carrier (LPCC[3] ) package. The device is ideal as a medium- power amplifier. Its ...
  • ATF-511P8,ATF-511P8 GaAs Field Effect
  • ATF-511P8 GaAs Field Effect Avago Technologiess ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC[3] ) package. The device is ideal as a high linearity, low-noise, ...
  • ATF-521P8,ATF-521P8 GaAs Field Effect
  • ATF-521P8 GaAs Field Effect Avago Technologies ATF521P8 is a singlevoltage high linearity, low noise EpHEMT housed in an 8lead JEDEC standard leadless plastic chip carrier (LPCC[3] ) package. The device is ideal as a mediumpower, ...
  • ATF-53189,ATF-53189 GaAs Field Effect
  • Avago Technologiess ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a high-linearity, low noise, medium-power amplifier. Its operating frequency range is ...
  • ATF-54143,ATF-54143 GaAs Field Effect
  • Avago Technologies ATF54143 is a high dynamic range, low noise, EPHEMT housed in a 4lead SC70 (SOT343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF54143 ideal for cellular/PCS base ...
  • ATF-58143,ATF-58143 GaAs Field Effect
  • Avago Technologies ATF58143 is a high dynamic range, low noise EPHEMT housed in a 4lead SC70 (SOT343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF58143 ideal as low noise ampli fer ...
  • VMMK-1218,VMMK-1218 GaAs Field Effect
  • Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise fgure that generates of of a single ...
  • VMMK-1225,VMMK-1225 GaAs Field Effect
  • Avago Technologies has combined its industry leading E- pHEMT technology with a revolutionary chip scale package. The VMMK-1225 can produce an LNA with high dynamic range, high gain and low noise i gure that operates of of a single position DC power ...
  • VMMK-2103,VMMK-2103 GaAs Field Effect
  • Avago Technologies has combined its industry lead- ing E-pHEMT technology with a revolutionary chip scale package. The GaAsCap wafer scale sub-miniature lead- less package is small and ultra thin, yet can be handled and placed with ...
  • VMMK-2503,E-pHEMT Amplifer In A Wafer Scale Package
  • VMMK-2503 GaAs Field Effect Avago Technologies has combined its industry leading E- pHEMT technology with a revolutionary chip scale pack- age. The GaAsCap wafer scale sub-miniature leadless pack- age is small and ultra thin yet can be handled and placed ...
  • FLL120MK,L-Band Medium & High Power GaAs FET
  • The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ...
  • MWT-22,2W High Linearity GaAs FET
  • The MwT-22 is GaAs MESFET device device whose nominal 0.5 micron gate length and 4800 micron gate width make it ideally suited for applications requiring high power up to 1.5-2watts. The chip is produced using MwT\'s reliable metal systems and all devices ...
  • MWT-24,4W High Linearity GaAs FET
  • The MwT-24 is GaAs MESFET device device whose nominal 0.5 micron gate length and 12000 microns gate width make it ideally suited for applications requiring high power up to 4watts. The chip is produced using MwT\'s reliable metal systems and all devices ...
  • MWT-25,6W High Linearity GaAs FET
  • The MwT-25 is GaAs MESFET device device whose nominal 0.5 micron gate length and 14000 micron gate width make it ideally suited for applications requiring high power up to 5-6 watts. The chip is produced using MwT\'s reliable metal systems and all devices ...
  • MWT-1789HL,DC-4 GHz Packaged FET Data Sheet
  • The MwT-1789HL is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high linearity driver and Power Amplifier applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, ...
  • MWT-1789LN,DC-4 GHz Packaged FET Data Sheet
  • The MwT-1789LN is a low noise GaAs MESFET device in low cost SOT89 package that is ideally suited for low noise/high dynamic range applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, CDMA, Edge, ...
  • MWT-1789SB,0.5 – 4 GHz Packaged FET
  • the MwT-1789SB is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high linearity driver or high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as ...
  • MWT-A989,DC-4 GHz Packaged FET
  • The MwT-A989 is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, ...
  • MWT-A989SB,0.5-4 GHz Packaged FET 2
  • the MwT-A989SB is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, ...
  • MWT-17Q3,DC –4 GHz Packaged FET Data Sheet
  • The MwT-17Q3 is a high linearity GaAs MESFET device in low cost QFN3X3 package that is ideally suited for high linearity driver, PA (Power Amplifier), and high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G wireless ...
  • MWT-22Q4,High Power, High Linearity Packaged FET
  • The MwT-22Q4 is a high linearity GaAs MESFET device in low cost QFN package that is ideally suited for high power / high linearity applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, ...
  • MWT-PH15QACSB,12 GHz QFN Packaged Fet Preliminary Data Sheet
  • Designed specifically for single voltage operations (i.e. no negative voltage is required), the MwT-PH15QACSB is a medium power AlGaAs/InGaAs PHEMT device in a low cost 3mm X 3mm QFN package with excellent RF performance up to 12 GHz. The chip is produced ...
  • MWT-PH8,20 GHz Medium Power AlGaAs/InGaAs PHEMT
  • The MwT-PH8 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron gate length and 1200 micron gate width make it ideally suited for applications requiring high-gain and power up to 20 GHz frequency ...
  • MWT-PH11,High Power AlGaAs/InGaAs PHEMT Preliminary Data Sheet
  • The MwT-PH11 is GaAs PHEMT device device whose nominal 0.3 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 1.5watt. The chip is produced using MwT\'s reliable metal systems and all devices ...
  • MWT-11,High Power, High Linearity GaAs FET
  • The MwT-11 is GaAs MESFET device device whose nominal 0.3 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 1watt. The chip is produced using MwT\'s reliable metal systems and all devices ...
  • MWT-4,26 GHz Low Noise GaAs FET
  • The MwT-4 is a GaAs MESFET device whose nominal quarter-micron gate length and 180 micron gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range. The straight geometry of the MwT-4 makes it ...
  • MWT-7,26 GHz Medium Power GaAs FET
  • The MwT-7 is a GaAs MESFET device whose nominal quarter-micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium power in the 500 MHz to 26 GHz frequency range. The straight geometry of the ...
  • MWT-LP7,Ultra - Low Phase Noise Device Up To 31 GHz
  • The MwT-LP7 is a low phase noise GaAs MESFET device with nominal quarter-micron gate length and 250-micron gate width. With deep under- standing on the physical origins of phase noise, the device is built by using a unique proprietary technology to minimize ...
  • MWT-A9,18 GHz High Gain, Low Noise GaAs FET
  • The MwT-A9 is a GaAs MESFET device whose nominal quarter-micron gate length and 750 micron gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 18 GHz frequency range with moderate power output while exhibiting low noise ...
  • MWT-1,12 GHz High Gain GaAs FET
  • The MwT-1 is a GaAs MESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally suited to applications requiring high-gain in the 100 MHz to 12 GHz frequency range. The straight geometry of the MwT-1 makes it ...
  • MWT-3,26 GHz High Power GaAs FET
  • The MwT-3 is a GaAs MESFET device whose nominal quarter-micron gate length and 300 micron gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from +18 to +21 dBm. ...
  • MWT-5,26 GHz High Gain, Dual Gate GaAs FET
  • The MwT-5 is a dual gate GaAs MESFET device whose nominal quarter-micron gate length and 300 micron gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range. The straigth gate geometry of the MwT-5 makes ...
  • MWT-2,26 GHz High Power GaAs FET
  • The MwT-2 is a GaAs MESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from 100 to 200 milli-watts. ...
  • MWT-6,18 GHz High Power GaAs FET
  • The MwT-6 is a GaAs MESFET is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point communica- tions links, and other wireless applications as the driver transistor for the output power amplifier. The third-order intercept ...
  • MWT-8,16 GHz High Power GaAs FET
  • The MwT-8 is a GaAs MESFET device which is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point communications links, and other wireless applications as the driver transistor for the output power amplifier. The ...
  • MWT-9,18 GHz High Power GaAs FET
  • The MwT-9 is a GaAs MESFET device whose nominal quarter-micron gate length and 750 micron gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 18 GHz frequency range with power output ranging from +24 to +26 dBm. It can ...
  • MWT-15,26 GHz Power GaAs FET
  • The MwT-15 is a GaAs MESFET device whose nominal quarter micron gate length and 630 micron gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from 100-200 milli-watts. ...
  • MWT-16,26 GHz High Power GaAs FET
  • The MwT-16 is a GaAs MESFET device whose nominal quarter micron gate length and 900 micron gate width make it ideally suited to applications requiring high-power output in the 2 GHz to 18 GHz frequency range. The straight gate geometry of the MwT-16 makes ...
  • MWT-17,500 MHz-12 GHz High Linearity Low Noise GaAs FET
  • The MwT-17 is a GaAs MESFET device which is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to- point communications links, and other wireless applications as the driver transistor for the output power amplifier. The ...
  • FLL300IL-1,L-band Medium & High Power Gaas Fet Devices Inc
  • The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for ...
  • NE76038,LOW NOISE L TO Ku-BAND GaAs MESFET
  • LOW NOISE L TO Ku-BAND GaAs MESFET,NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise ...