N-Channel Power Field Effect Transistor

This high voltage MOSFET H01N60SI / H01N60SJ uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls By Hi-Sincerity Microelectronics Corp.
H01N60S 's PackagesH01N60S 's pdf datasheet

H01N60S Pinout, Pinouts
H01N60S pinout,Pin out
This is one package pinout of H01N60S,If you need more pinouts please download H01N60S's pdf datasheet.

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