N-Channel Power Field Effect Transistor

This high voltage MOSFET H02N60I H02N60E H02N60F H02N60J uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. By Hi-Sincerity Microelectronics Corp.
H02N60 's PackagesH02N60 's pdf datasheet

H02N60 Pinout, Pinouts
H02N60 pinout,Pin out
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