N-Channel Power Field Effect Transistor

This high voltage MOSFET H02N60I H02N60E H02N60F H02N60J uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. By Hi-Sincerity Microelectronics Corp.
H02N60 's PackagesH02N60 's pdf datasheet
H02N60I
H02N60E
H02N60F
H02N60J




H02N60 Pinout, Pinouts
H02N60 pinout,Pin out
This is one package pinout of H02N60,If you need more pinouts please download H02N60's pdf datasheet.

H02N60 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

H02N60 Pb-Free H02N60 Cross Reference H02N60 Schematic H02N60 Distributor
H02N60 Application Notes H02N60 RoHS H02N60 Circuits H02N60 footprint