N-Channel Power Field Effect Transistor

This advanced high voltage MOSFET H04N60U H04N60E H04N60F is designed to withstand high energy in the avalanche mode and Switch efficiently. This new high energy device also offers a drain-to-source Diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. By Hi-Sincerity Microelectronics Corp.
H04N60 's PackagesH04N60 's pdf datasheet

H04N60 Pinout, Pinouts
H04N60 pinout,Pin out
This is one package pinout of H04N60,If you need more pinouts please download H04N60's pdf datasheet.

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