N-Channel Power Field Effect Transistor

This high voltage MOSFET H06N60U H06N60E H06N60F uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls By Hi-Sincerity Microelectronics Corp.