N-Channel Power Field Effect TransistorThis high voltage MOSFET H06N60U H06N60E H06N60F uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source Diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM Motor Controls By Hi-Sincerity Microelectronics Corp.
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H06N60 Pb-Free | H06N60 Cross Reference | H06N60 Schematic | H06N60 Distributor |
H06N60 Application Notes | H06N60 RoHS | H06N60 Circuits | H06N60 footprint |