N-Channel Power Field Effect Transistor

This high voltage MOSFET H07N60E H07N60F uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls By Hi-Sincerity Microelectronics Corp.
H07N60 's PackagesH07N60 's pdf datasheet

H07N60 Pinout, Pinouts
H07N60 pinout,Pin out
This is one package pinout of H07N60,If you need more pinouts please download H07N60's pdf datasheet.

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