The H5TQ4G43MMR-xxX and H5TQ4G83MMR-xxX are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchro- nous DRAM ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the Clock While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth. By Hynix Semiconductor
H5TQ4G43MMR 's PackagesH5TQ4G43MMR 's pdf datasheet

H5TQ4G43MMR Pinout, Pinouts
H5TQ4G43MMR pinout,Pin out
This is one package pinout of H5TQ4G43MMR,If you need more pinouts please download H5TQ4G43MMR's pdf datasheet.

H5TQ4G43MMR circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

H5TQ4G43MMR Pb-Free H5TQ4G43MMR Cross Reference H5TQ4G43MMR Schematic H5TQ4G43MMR Distributor
H5TQ4G43MMR Application Notes H5TQ4G43MMR RoHS H5TQ4G43MMR Circuits H5TQ4G43MMR footprint
Hot categories