HEF4720B, HEF4720V LSI 256-bit, 1-bit Per Word Random Access Memories

The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access Memories with 3-state outputs. The Memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 45 to 125 V; minimum stand-by voltage for both types is 3 V. The use of LOCMOS gives the added advantage of very low stand-by power. The circuits CAN be directly interfaced with standard bipolar devices (TTL) without using special Interface circuits. The memory operates from a single power supply. The separate chip select input (CS) allows simple memory expansion when the outputs are wire-O Red. If CS is HIGH, the outputs are floating and no new information CAN be written into the memory. The signal at O has the same polarity as the data input D, while the signal at O is the complement of the signal at O. The write control W must be HIGH for writing into the memory.
By NXP Semiconductors
HEF4720B 's PackagesHEF4720B 's pdf datasheet



HEF4720B Pinout, Pinouts
HEF4720B pinout,Pin out
This is one package pinout of HEF4720B,If you need more pinouts please download HEF4720B's pdf datasheet.

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