NPN SILICON RF Power Transistor , HF75-28S The ASI HF75-28S is Designed for bradband aplications up to 30 MHz. By Advanced Semiconductor, Inc.
Part Manufacturer Description Datasheet Samples
ISL71090SEHF75/PROTO Renesas Electronics Corporation $ Reference output voltage: 7.5V ±0.05% $ Accuracy over temperature: ±0.15% $ Output voltage noise: 1.0µVP-P typ (0.1Hz to 10Hz) $ Supply current: 930µA (typ) $ Tempco (box method): 10ppm/°C max $ Output current capability: 20mA $ Line regulation: 8ppm/V $ Load regulation: 10ppm/mA $ Operating temperature range: -55°C to +125°C $ Radiation environment $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 100krad(Si)* $$ SET/SEL/SEB: 86MeV•cm2/mg

*Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate

$ Electrically screened to SMD 5962-13211
HF75-28S 's PackagesHF75-28S 's pdf datasheet

HF75-28S Pinout, Pinouts
HF75-28S pinout,Pin out
This is one package pinout of HF75-28S,If you need more pinouts please download HF75-28S's pdf datasheet.

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