Ultra High Frequency Transistor Arrays

The HFA3046 HFA3096 HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporations complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated Transistors on a common monolithic substrate. The NPN Transistors exhibit a fT of 8GHz while the PNP Transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency Amplifier and mixer applications.
The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP Transistors The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual Transistors for maximum application flexibility. Monolithic construction of these Transistor Arrays provides close electrical and thermal matching of the five Transistors
Intersil provides an Application Note illustrating the use of these devices as RF Amplifiers For more information, visit our website at www.intersil.com.
By Intersil Corporation
Part Manufacturer Description Datasheet Samples
HFA3127BZ96 Renesas Electronics Corporation
  • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
  • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
  • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
  • PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
  • PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
  • PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V
  • Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
  • Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
  • Complete isolation between transistors
  • Pin compatible with industry standard 3XXX series arrays
  • Pb-free (RoHS compliant)
HFA3127BZ Renesas Electronics Corporation
  • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
  • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
  • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
  • PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
  • PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
  • PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V
  • Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
  • Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
  • Complete isolation between transistors
  • Pin compatible with industry standard 3XXX series arrays
  • Pb-free (RoHS compliant)
HFA3127RZ96 Renesas Electronics Corporation
  • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
  • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
  • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
  • PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
  • PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
  • PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V
  • Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
  • Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
  • Complete isolation between transistors
  • Pin compatible with industry standard 3XXX series arrays
  • Pb-free (RoHS compliant)
HFA3127RZ Renesas Electronics Corporation
  • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
  • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
  • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
  • PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
  • PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
  • PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V
  • Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
  • Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
  • Complete isolation between transistors
  • Pin compatible with industry standard 3XXX series arrays
  • Pb-free (RoHS compliant)
HFA3127 's PackagesHFA3127 's pdf datasheet
HFA3127B SOIC
HFA3127B96 SOIC
HFA3127BZ SOIC
HFA3127BZ96 SOIC
HFA3127R QFN
HFA3127R96 QFN
HFA3127RZ QFN
HFA3127RZ96 QFN




HFA3127 Pinout, Pinouts
HFA3127 pinout,Pin out
This is one package pinout of HFA3127,If you need more pinouts please download HFA3127's pdf datasheet.

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