600V, SMPS Series N-Channel IGBT With Anti-Parallel Hyperfast Diode

The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a Bipolar Transistor These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency Switch mode power supplies. By Fairchild Semiconductor
HGT1N30N60A4D 's PackagesHGT1N30N60A4D 's pdf datasheet
30N60A4D




HGT1N30N60A4D Pinout, Pinouts
HGT1N30N60A4D pinout,Pin out
This is one package pinout of HGT1N30N60A4D,If you need more pinouts please download HGT1N30N60A4D's pdf datasheet.

HGT1N30N60A4D Application circuits
HGT1N30N60A4D circuits
This is one application circuit of HGT1N30N60A4D,If you need more circuits,please download HGT1N30N60A4D's pdf datasheet.


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