27a, 600v, Ufs Series N-channel Igbts With Anti-parallel Hyperfast Diode

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar Transistors HGTG12N60B3D HGTP12N60B3D HGT1S12N60B3DS . These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The Diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. By Intersil Corporation
HGT1S12N60B3DS 's PackagesHGT1S12N60B3DS 's pdf datasheet
HGTG12N60B3D TO-247

HGT1S12N60B3DS Pinout, Pinouts
HGT1S12N60B3DS pinout,Pin out
This is one package pinout of HGT1S12N60B3DS,If you need more pinouts please download HGT1S12N60B3DS's pdf datasheet.

HGT1S12N60B3DS Application circuits
HGT1S12N60B3DS circuits
This is one application circuit of HGT1S12N60B3DS,If you need more circuits,please download HGT1S12N60B3DS's pdf datasheet.

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