27a, 600v, Ufs Series N-channel Igbts Corporation

The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. By Intersil Corporation
HGT1S12N60B3S 's PackagesHGT1S12N60B3S 's pdf datasheet
HGTP12N60B3




HGT1S12N60B3S Pinout, Pinouts
HGT1S12N60B3S pinout,Pin out
This is one package pinout of HGT1S12N60B3S,If you need more pinouts please download HGT1S12N60B3S's pdf datasheet.

HGT1S12N60B3S Application circuits
HGT1S12N60B3S circuits
This is one application circuit of HGT1S12N60B3S,If you need more circuits,please download HGT1S12N60B3S's pdf datasheet.


Related Electronics Part Number

Related Keywords:

HGT1S12N60B3S Pb-Free HGT1S12N60B3S Cross Reference HGT1S12N60B3S Schematic HGT1S12N60B3S Distributor
HGT1S12N60B3S Application Notes HGT1S12N60B3S RoHS HGT1S12N60B3S Circuits HGT1S12N60B3S footprint