24A, 600V, UFS Series N-Channel IGBTsThe HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S
are MOS gated high voltage switching devices combining the
best features of MOSFETs and Bipolar Transistors These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a Bipolar Transistor The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. By Harris Corporation
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| HGT1S12N60C3S Pb-Free | HGT1S12N60C3S Cross Reference | HGT1S12N60C3S Schematic | HGT1S12N60C3S Distributor |
| HGT1S12N60C3S Application Notes | HGT1S12N60C3S RoHS | HGT1S12N60C3S Circuits | HGT1S12N60C3S footprint |
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