24A, 600V, UFS Series N-Channel IGBTs

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. By Harris Corporation
HGT1S12N60C3S 's PackagesHGT1S12N60C3S 's pdf datasheet
HGTP12N60C3
HGT1S12N60C3

HGT1S12N60C3S pdf datasheet download


HGT1S12N60C3S Pinout, Pinouts
HGT1S12N60C3S pinout,Pin out
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