5.3a, 1200v, Npt Series N-channel Igbt With Anti-parallel Hyperfast Diode

The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and Bipolar Transistors This device has the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The IGBT is development type number TA49316. The Diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). By Intersil Corporation
HGT1S1N120BNDS 's PackagesHGT1S1N120BNDS 's pdf datasheet
HGTP1N120BND TO-220AB




HGT1S1N120BNDS Pinout, Pinouts
HGT1S1N120BNDS pinout,Pin out
This is one package pinout of HGT1S1N120BNDS,If you need more pinouts please download HGT1S1N120BNDS's pdf datasheet.

HGT1S1N120BNDS Application circuits
HGT1S1N120BNDS circuits
This is one application circuit of HGT1S1N120BNDS,If you need more circuits,please download HGT1S1N120BNDS's pdf datasheet.


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