600v, Smps Series N-channel Igbt

The HGTD3N60A4S HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency Switch mode power supplies. By Intersil Corporation
HGT1S3N60A4S 's PackagesHGT1S3N60A4S 's pdf datasheet
HGTD3N60A4S TO-252

HGT1S3N60A4S Pinout, Pinouts
HGT1S3N60A4S pinout,Pin out
This is one package pinout of HGT1S3N60A4S,If you need more pinouts please download HGT1S3N60A4S's pdf datasheet.

HGT1S3N60A4S Application circuits
HGT1S3N60A4S circuits
This is one application circuit of HGT1S3N60A4S,If you need more circuits,please download HGT1S3N60A4S's pdf datasheet.

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