70A, 600V, UFS Series N-Channel IGBT With Anti-Parallel Hyperfast Diodes

The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and Bipolar Transistors The device has the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49052. The Diode used in anti-parallel with the IGBT is the development type TA49063. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. By Fairchild Semiconductor
HGT1Y40N60B3D 's PackagesHGT1Y40N60B3D 's pdf datasheet
G40N60B3D TO-264




HGT1Y40N60B3D Pinout, Pinouts
HGT1Y40N60B3D pinout,Pin out
This is one package pinout of HGT1Y40N60B3D,If you need more pinouts please download HGT1Y40N60B3D's pdf datasheet.

HGT1Y40N60B3D Application circuits
HGT1Y40N60B3D circuits
This is one application circuit of HGT1Y40N60B3D,If you need more circuits,please download HGT1Y40N60B3D's pdf datasheet.


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