600V, SMPS Series N-Channel IGBT With Anti-Parallel Hyperfast Diode

This family of MOS gated high voltage switching devices HGTG20N60A4D HGT4E20N60A4DS combine the best features of MOSFETs and bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The Diode used in anti-parallel is the development type TA49372. These IGBTs are ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. These devices have been optimized for high frequency Switch mode power supplies. By Fairchild Semiconductor
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HGT4E20N60A4DS Pinout, Pinouts
HGT4E20N60A4DS pinout,Pin out
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HGT4E20N60A4DS Application circuits
HGT4E20N60A4DS circuits
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