7a, 600v, Ufs Series N-channel Igbts Corporation

The HGTD3N60B3S HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. By Intersil Corporation
HGTD3N60B3S 's PackagesHGTD3N60B3S 's pdf datasheet
HGT1S3N60B3S TO-263

HGTD3N60B3S Pinout, Pinouts
HGTD3N60B3S pinout,Pin out
This is one package pinout of HGTD3N60B3S,If you need more pinouts please download HGTD3N60B3S's pdf datasheet.

HGTD3N60B3S Application circuits
HGTD3N60B3S circuits
This is one application circuit of HGTD3N60B3S,If you need more circuits,please download HGTD3N60B3S's pdf datasheet.

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