6A, 600V, UFS Series N-Channel IGBTsThe HGTD3N60C3 and HGTD3N60C3S are MOS gated high
voltage switching devices combining the best features of
MOSFETs and Bipolar Transistors These devices have the
high input impedance of a MOSFET and the low on-state con-
duction loss of a Bipolar Transistor The much lower on-state
voltage drop varies only moderately between 25oC and
150oC. By Harris Corporation
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| HGTD3N60C3S Pb-Free | HGTD3N60C3S Cross Reference | HGTD3N60C3S Schematic | HGTD3N60C3S Distributor |
| HGTD3N60C3S Application Notes | HGTD3N60C3S RoHS | HGTD3N60C3S Circuits | HGTD3N60C3S footprint |
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