6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state con- duction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. By Harris Corporation
HGTD3N60C3S 's PackagesHGTD3N60C3S 's pdf datasheet

HGTD3N60C3S Pinout, Pinouts
HGTD3N60C3S pinout,Pin out
This is one package pinout of HGTD3N60C3S,If you need more pinouts please download HGTD3N60C3S's pdf datasheet.

HGTD3N60C3S Application circuits
HGTD3N60C3S circuits
This is one application circuit of HGTD3N60C3S,If you need more circuits,please download HGTD3N60C3S's pdf datasheet.

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