35A, 1200V, NPT Series N-Channel IGBT With Anti-Parallel Hyperfast Diode35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG10N120BND The HGTG10N120BND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and Bipolar Transistors This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a Bipolar Transistor The IGBT used
is the development type TA49290. The Diode used is the
development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49302. By Fairchild Semiconductor
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| HGTG10N120BND Pb-Free | HGTG10N120BND Cross Reference | HGTG10N120BND Schematic | HGTG10N120BND Distributor |
| HGTG10N120BND Application Notes | HGTG10N120BND RoHS | HGTG10N120BND Circuits | HGTG10N120BND footprint |
