20a, 1000v N-channel Igbt Corporation

The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar Transistors The device has the high input impedance of a MOS- FET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essen- tial, such as: AC and DC Motor Controls power supplies and drivers for solenoids, relays and contactors. By Intersil Corporation