20a, 1000v N-channel Igbt CorporationThe HGTG20N100D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
Transistors The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a Bipolar Transistor
The much lower on-state voltage drop varies only moderately
between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen-
tial, such as: AC and DC Motor Controls power supplies and
drivers for solenoids, relays and contactors. By Intersil Corporation
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HGTG20N100D2 Pb-Free | HGTG20N100D2 Cross Reference | HGTG20N100D2 Schematic | HGTG20N100D2 Distributor |
HGTG20N100D2 Application Notes | HGTG20N100D2 RoHS | HGTG20N100D2 Circuits | HGTG20N100D2 footprint |