45a, 1200v, Ufs Series N-channel Igbt With Anti-parallel Hyperfast Diode CorporationThe HGTG20N120C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and Bipolar Transistors This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a Bipolar Transistor The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. By Intersil Corporation
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| HGTG20N120C3D Pb-Free | HGTG20N120C3D Cross Reference | HGTG20N120C3D Schematic | HGTG20N120C3D Distributor |
| HGTG20N120C3D Application Notes | HGTG20N120C3D RoHS | HGTG20N120C3D Circuits | HGTG20N120C3D footprint |
