45a, 1200v, Ufs Series N-channel Igbt With Anti-parallel Hyperfast Diode Corporation

The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and Bipolar Transistors This device has the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. By Intersil Corporation
HGTG20N120C3D 's PackagesHGTG20N120C3D 's pdf datasheet

HGTG20N120C3D Pinout, Pinouts
HGTG20N120C3D pinout,Pin out
This is one package pinout of HGTG20N120C3D,If you need more pinouts please download HGTG20N120C3D's pdf datasheet.

HGTG20N120C3D Application circuits
HGTG20N120C3D circuits
This is one application circuit of HGTG20N120C3D,If you need more circuits,please download HGTG20N120C3D's pdf datasheet.

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