34a, 1200v N-channel Igbt Corporation

The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of MOSFETs and Bipolar Transistors The device has the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC Motor Controls power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009. By Intersil Corporation
HGTG20N120E2 's PackagesHGTG20N120E2 's pdf datasheet

HGTG20N120E2 Pinout, Pinouts
HGTG20N120E2 pinout,Pin out
This is one package pinout of HGTG20N120E2,If you need more pinouts please download HGTG20N120E2's pdf datasheet.

HGTG20N120E2 Application circuits
HGTG20N120E2 circuits
This is one application circuit of HGTG20N120E2,If you need more circuits,please download HGTG20N120E2's pdf datasheet.

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