20a, 500v N-channel Igbt With Anti-parallel Ultrafast Diode

The IGBT HGTG20N50C1D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar Transistors The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Transistor The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The Diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC Motor Controls power supplies and drivers for solenoids, relays and contractors. By Intersil Corporation
HGTG20N50C1D 's PackagesHGTG20N50C1D 's pdf datasheet



HGTG20N50C1D Pinout, Pinouts
HGTG20N50C1D pinout,Pin out
This is one package pinout of HGTG20N50C1D,If you need more pinouts please download HGTG20N50C1D's pdf datasheet.

HGTG20N50C1D Application circuits
HGTG20N50C1D circuits
This is one application circuit of HGTG20N50C1D,If you need more circuits,please download HGTG20N50C1D's pdf datasheet.


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