600V, UFS Series N-Channel IGBT With Anti-Parallel Hyperfast Diode

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and Bipolar Transistors The device has the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage o o drop varies only moderately between 25 C and 150 C. The Diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. By Fairchild Semiconductor
HGTG20N60B3D 's PackagesHGTG20N60B3D 's pdf datasheet



HGTG20N60B3D Pinout, Pinouts
HGTG20N60B3D pinout,Pin out
This is one package pinout of HGTG20N60B3D,If you need more pinouts please download HGTG20N60B3D's pdf datasheet.

HGTG20N60B3D Application circuits
HGTG20N60B3D circuits
This is one application circuit of HGTG20N60B3D,If you need more circuits,please download HGTG20N60B3D's pdf datasheet.


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