600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar Transistors This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Transistor The much lower on-state voltage drop varies only moderately between 25C and 150C.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency Switch mode power supplies.
Formerly Developmental Type TA49343.
By Fairchild Semiconductor
HGTG30N60A4 's PackagesHGTG30N60A4 's pdf datasheet

HGTG30N60A4 Pinout, Pinouts
HGTG30N60A4 pinout,Pin out
This is one package pinout of HGTG30N60A4,If you need more pinouts please download HGTG30N60A4's pdf datasheet.

HGTG30N60A4 Application circuits
HGTG30N60A4 circuits
This is one application circuit of HGTG30N60A4,If you need more circuits,please download HGTG30N60A4's pdf datasheet.

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