600V, SMPS Series N-Channel IGBT With Anti-Parallel Hyperfast Diode

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors This device has the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The Diode used in anti-parallel is the development type TA49373.
This IGBT HGTG30N60A4D is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency Switch mode power supplies.
Formerly Developmental Type TA49345.
By Fairchild Semiconductor
HGTG30N60A4D 's PackagesHGTG30N60A4D 's pdf datasheet



HGTG30N60A4D Pinout, Pinouts
HGTG30N60A4D pinout,Pin out
This is one package pinout of HGTG30N60A4D,If you need more pinouts please download HGTG30N60A4D's pdf datasheet.

HGTG30N60A4D Application circuits
HGTG30N60A4D circuits
This is one application circuit of HGTG30N60A4D,If you need more circuits,please download HGTG30N60A4D's pdf datasheet.


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