63a, 600v, Ufs Series N-channel Igbt Corporation

The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar Transistors The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. By Intersil Corporation
HGTG30N60C3 's PackagesHGTG30N60C3 's pdf datasheet

HGTG30N60C3 Pinout, Pinouts
HGTG30N60C3 pinout,Pin out
This is one package pinout of HGTG30N60C3,If you need more pinouts please download HGTG30N60C3's pdf datasheet.

HGTG30N60C3 Application circuits
HGTG30N60C3 circuits
This is one application circuit of HGTG30N60C3,If you need more circuits,please download HGTG30N60C3's pdf datasheet.

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