34a, 1000v N-channel Igbt Corporation

The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar Transistors The device has the high input impedance of a MOS- FET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC Motor Controls power sup- plies and drivers for solenoids, relays and contactors. By Intersil Corporation
HGTG34N100E2 's PackagesHGTG34N100E2 's pdf datasheet



HGTG34N100E2 Pinout, Pinouts
HGTG34N100E2 pinout,Pin out
This is one package pinout of HGTG34N100E2,If you need more pinouts please download HGTG34N100E2's pdf datasheet.

HGTG34N100E2 Application circuits
HGTG34N100E2 circuits
This is one application circuit of HGTG34N100E2,If you need more circuits,please download HGTG34N100E2's pdf datasheet.


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