600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency Switch mode power supplies. By Fairchild Semiconductor
HGTG7N60A4 's PackagesHGTG7N60A4 's pdf datasheet
HGT1S7N60A4S9A TO-263
7N60A4 TO-263




HGTG7N60A4 Pinout, Pinouts
HGTG7N60A4 pinout,Pin out
This is one package pinout of HGTG7N60A4,If you need more pinouts please download HGTG7N60A4's pdf datasheet.

HGTG7N60A4 Application circuits
HGTG7N60A4 circuits
This is one application circuit of HGTG7N60A4,If you need more circuits,please download HGTG7N60A4's pdf datasheet.


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