600V,SMPS Series N-Channel IGBT Wirth Parallel Hyperfast Diode

The HGTG7N60A4D HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25oC and 150C. The IGBT used is the development type TA49331. The Diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency Switch mode power supplies.
Formerly Developmental Type TA49333.
By Fairchild Semiconductor
HGTG7N60A4D 's PackagesHGTG7N60A4D 's pdf datasheet

HGTG7N60A4D Pinout, Pinouts
HGTG7N60A4D pinout,Pin out
This is one package pinout of HGTG7N60A4D,If you need more pinouts please download HGTG7N60A4D's pdf datasheet.

HGTG7N60A4D Application circuits
HGTG7N60A4D circuits
This is one application circuit of HGTG7N60A4D,If you need more circuits,please download HGTG7N60A4D's pdf datasheet.

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