600V SMPS Series N-Channel IGBT

The HGTP12N60A4 HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25C and 150C.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency Switch mode power supplies.
Formerly Developmental Type TA49335.
By Fairchild Semiconductor
HGTP12N60A4 's PackagesHGTP12N60A4 's pdf datasheet

HGTP12N60A4 Pinout, Pinouts
HGTP12N60A4 pinout,Pin out
This is one package pinout of HGTP12N60A4,If you need more pinouts please download HGTP12N60A4's pdf datasheet.

HGTP12N60A4 Application circuits
HGTP12N60A4 circuits
This is one application circuit of HGTP12N60A4,If you need more circuits,please download HGTP12N60A4's pdf datasheet.

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