600V, SMPS Series N-Channel IGBT With Anti-Parallel Hyperfast Diode

The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25 C and 150 C. The IGBT used is the development type TA49327. The Diode used in anti-parallel is the development type TA49369.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.This device has been optimized for high frequency Switch mode power supplies.
By Fairchild Semiconductor
HGTP3N60A4D 's PackagesHGTP3N60A4D 's pdf datasheet

HGTP3N60A4D Pinout, Pinouts
HGTP3N60A4D pinout,Pin out
This is one package pinout of HGTP3N60A4D,If you need more pinouts please download HGTP3N60A4D's pdf datasheet.

HGTP3N60A4D Application circuits
HGTP3N60A4D circuits
This is one application circuit of HGTP3N60A4D,If you need more circuits,please download HGTP3N60A4D's pdf datasheet.

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