21A, 1200V, NPT Series N-Channel IGBTs With Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non- Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and Bipolar Transistors This device has the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49306.
By Fairchild Semiconductor
HGTP5N120BND 's PackagesHGTP5N120BND 's pdf datasheet

HGTP5N120BND Pinout, Pinouts
HGTP5N120BND pinout,Pin out
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